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| Semiconductor T NT DUC PRO LACEME 747 ETE REP -7 OL -442 OBS ENDED -800 com 1 M ons arris. COM icati O RE ral Appl tapp@h N n Cent : ce Call or email CA3018, CA3018A January 1999 File Number 338.5 General Purpose Transistor Arrays The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate. Features * Matched Monolithic General Purpose Transistors * hFE Matched . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10% * VBE Matched - CA3018A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mV - CA3018 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mV * Operation From DC to 120MHz * Wide Operating Current Range * CA3018A Performance Characteristics Controlled from 10A to 10mA * Low Noise Figure . . . . . . . . . . . . . . . . 3.2dB (Typ) at 1kHz * Full Military Temperature Range . . . . . . . -55oC to 125oC [ /Title () /Subject () /Autho () /Keyords ) /Cretor () /DOCI FO dfark Two of the four transistors are connected in the Darlington configuration. The substrate is connected to a separate terminal for maximum flexibility. The transistors of the CA3018 and the CA3018A are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits but in addition they provide the advantages of close electrical and thermal matching inherent in integrated circuit construction. The CA3018A is similar to the CA3018 but features tighter control of current gain, leakage, and offset parameters making it suitable for more critical applications requiring premium performance. Applications * Two Isolated Transistors and a Darlington Connected Transistor Pair for Low Power Applications at Frequencies from DC through the VHF Range Part Number Information PART NUMBER CA3018 (obsolete) CA3018A TEMP. RANGE (oC) -55 to 125 -55 to 125 PACKAGE 12 Pin Metal Can 12 Pin Metal Can PKG. NO. T12.B T12.B * Custom Designed Differential Amplifiers * Temperature Compensated Amplifiers * See Application Note, AN5296 "Application of the CA3018 Integrated Circuit Transistor Array" for Suggested Applications /Pageode /Useutines /DOCIEW dfark Pinout CA3018, CA3018A (METAL CAN) TOP VIEW 12 1 2 3 4 Q2 5 6 Q3 Q1 7 8 Q4 11 10 9 SUBSTRATE 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. Copyright (c) Harris Corporation 1999 CA3018, CA3018A Absolute Maximum Ratings CA3018 Collector-to-Emitter Voltage, VCEO . . . . . . . . . . 15V Collector-to-Base Voltage, VCBO . . . . . . . . . . . . 20V Collector-to-Substrate Voltage, VCIO (Note 1) . . 20V Emitter-to-Base Voltage, VEBO . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . 50mA CA3018A 15V 30V 40V 5V 50mA Thermal Information Thermal Resistance (Typical, Note 2) JA (oC/W) JC (oC/W) Metal Can Package . . . . . . . . . . . . . . . 200 120 Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . .175oC Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. The collector of each transistor of the CA3018 and CA3018A is isolated from the substrate by an integral diode. The substrate (Terminal 10) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. 2. JA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications TA = 25oC CA3018 CA3018A MAX MIN TYP MAX UNITS PARAMETER DC CHARACTERISTICS Collector Cutoff Current (Figure 1) Collector Cutoff Current (Figure 2) SYMBOL TEST CONDITIONS MIN TYP ICBO ICEO ICEOD V(BR)CEO V(BR)CBO V(BR)EBO V(BR)CIO VCES hFE VCB = 10V, IE = 0 VCE = 10V, IB = 0 VCE = 10V, IB = 0 IC = 1mA, IB = 0 IC = 10A, IE = 0 IE = 10A, IC = 0 IC = 10A, ICI = 0 IB = 1mA, IC = 10mA VCE = 3V IC = 10mA IC = 1mA IC = 10A - 0.002 See Fig. 2 24 60 7 60 0.23 100 100 54 0.97 100 5 - 0.002 See Fig. 2 24 60 7 60 0.23 100 100 54 0.97 40 0.5 nA A A V V V V V - Collector Cutoff Current Darlington Pair Collector-to-Emitter Breakdown Voltage Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector-to-Substrate Breakdown Voltage Collector-to-Emitter Saturation Voltage Forward Current Transfer Ratio (Note 3) (Figure 3) 15 20 5 20 30 0.9 200 - 15 30 5 40 50 60 30 0.9 5 0.5 200 - Magnitude of Static-Beta Ratio (Isolated Transistors Q1 and Q2) (Figure 3) Forward Current Transfer Ratio Darlington Pair (Q3 and Q4) (Figure 4) Base-to-Emitter Voltage (Figure 5) hFED VCE = 3V, IC1 = IC2 = 1mA VCE = 3V IC = 1mA IC = 100A VBE VCE = 3V IE = 1mA IE = 10mA 1500 - 5400 0.715 0.800 0.48 5 2000 1000 0.600 - 5400 2800 0.715 0.800 0.48 0.800 0.900 2 V V mV Input Offset Voltage (Figures 5, 7) V BE1 - V BE2 VCE = 3V, IE = 1mA Temperature Coefficient: Base-to-Emitter Voltage Q1, Q2 (Figure 6) V BE ----------------T VCE = 3V, IE = 1mA - -1.9 - - -1.9 - mV/oC 2 CA3018, CA3018A Electrical Specifications TA = 25oC (Continued) CA3018 PARAMETER Base (Q3)-to-Emitter (Q4) Voltage Darlington Pair (Figure 8) Temperature Coefficient: Base-to-Emitter Voltage Darlington Pair (Q3 and Q4) (Figure 9) Temperature Coefficient: Magnitude of Input Offset Voltage DYNAMIC CHARACTERISTICS Low Frequency Noise Figure (Figures 10 - 12) NF f = 1kHz, VCE = 3V, IC = 100A, Source Resistance = 1k 3.25 3.25 dB SYMBOL VBED (V9-1) TEST CONDITIONS VCE = 3V IE = 10mA IE = 1mA V BED --------------------T VCE = 3V, IE = 1mA MIN TYP 1.46 1.32 4.4 MAX MIN 1.10 CA3018A TYP 1.46 1.32 4.4 MAX 1.60 1.50 UNITS V V mV/oC V BE1 - V BE2 VCC = 6V, VEE = -6V, ------------------------------------ I = I = 1mA T C1 C2 - 10 - - 10 - V/oC Low Frequency, Small Signal Equivalent Circuit Characteristics Forward Current Transfer Ratio (Figure 13) Short Circuit Input Impedance (Figure 13) Open Circuit Output Impedance (Figure 13) Open Circuit Reverse Voltage Transfer Ratio (Figure 13) Admittance Characteristics Forward Transfer Admittance (Figure 14) Input Admittance (Figure 15) YFE YIE YOE YRE fT CEB CCB CCI f = 1MHz, VCE = 3V, IC = 1mA f = 1MHz, VCE = 3V, IC = 1mA f = 1MHz, VCE = 3V, IC = 1mA f = 1MHz, VCE = 3V, IC = 1mA VCE = 3V, IC = 3mA VEB = 3V, IE = 0 VCB = 3V, IC = 0 VCI = 3V, IC = 0 300 500 0.6 0.58 2.8 31 j1.5 0.3 + j0.04 0.001 + j0.03 31 j1.5 0.3 + j0.04 0.001 + j0.03 mS hFE hIE hOE hRE f = 1kHz, VCE = 3V, IC = 1mA f = 1kHz, VCE = 3V, IC = 1mA f = 1kHz, VCE = 3V, IC = 1mA f = 1kHz, VCE = 3V, IC = 1mA 110 110 - - 3.5 - - 3.5 - k S - - 15.6 - - 15.6 - - 1.8 x 10-4 - - 1.8 x 10-4 - - - - - mS Output Admittance (Figure 16) - - - - mS Reverse Transfer Admittance (Figure 17) Gain Bandwidth Product (Figure 18) Emitter-to-Base Capacitance Collector-to-Base Capacitance Collector-to-Substrate Capacitance NOTE: See Figure 17 mS - 300 - 500 0.6 0.58 2.8 - MHz pF pF pF 3. Actual forcing current is via the emitter for this test. 3 CA3018, CA3018A Typical Performance Curves 102 COLLECTOR CUTOFF CURRENT (nA) 10 VCB = 15V VCB = 10V VCB = 5V COLLECTOR CUTOFF CURRENT (nA) IE = 0 103 102 VCE = 10V 10 VCE = 5V 1 10-1 10-2 10-3 0 25 50 75 100 AMBIENT TEMPERATURE (oC) 125 0 25 50 75 100 AMBIENT TEMPERATURE (oC) 125 IB = 0 1 10-1 10-2 10-3 10-4 FIGURE 1. TYPICAL COLLECTOR-TO-BASE CUTOFF CURRENT vs TEMPERATURE 120 110 100 90 80 70 60 50 0.01 0.8 VCE = 3V TA = 25oC 1.1 FIGURE 2. TYPICAL COLLECTOR-TO-EMITTER CUTOFF CURRENT vs TEMPERATURE STATIC FORWARD CURRENT TRANSFER RATIO FOR DARLINGTON PAIR (hFED) 8000 7000 6000 5000 4000 3000 2000 1000 0 0.1 1 EMITTER CURRENT (mA) 10 VCE = 3V TA = 25oC STATIC FORWARD CURRENT TRANSFER RATIO (hFE) hFE 1 BETA RATIO h FE1 h FE2 h FE2 ------------- OR ------------h FE1 0.9 0.1 1 10 EMITTER CURRENT (mA) FIGURE 3. TYPICAL STATIC FORWARD CURRENT TRANSFER RATIO AND BETA RATIO FOR TRANSISTORS Q1 AND Q2 vs EMITTER CURRENT 4 VCE = 3V TA = 25oC 0.7 VBE 3 FIGURE 4. TYPICAL STATIC FORWARD CURRENT - TRANSFER RATIO FOR DARLINGTON CONNECTED TRANSISTORS Q3 AND Q4 vs EMITTER CURRENT INPUT OFFSET VOLTAGE Q1 AND Q2 (mV) 0.8 BASE-TO-EMITTER VOLTAGE (V) VCE = 3V 1.0 BASE-TO-EMITTER VOLTAGE (V) 0.9 0.8 0.7 IE = 3mA 0.6 0.5 0.4 -75 IE = 1mA IE = 0.5mA 0.6 2 0.5 VIO = |VBE1 - VBE2| 0.4 0.01 1 0 0.1 1.0 EMITTER CURRENT (mA) 10 -50 -25 0 25 50 75 100 AMBIENT TEMPERATURE (oC) 125 FIGURE 5. TYPICAL STATIC BASE-TO-EMITTER VOLTAGE CHARACTERISTIC AND INPUT OFFSET VOLTAGE FOR Q1 AND Q2 vs EMITTER CURRENT FIGURE 6. TYPICAL BASE-TO-EMITTER VOLTAGE CHARACTERISTIC FOR EACH TRANSISTOR vs TEMPERATURE 4 CA3018, CA3018A Typical Performance Curves 5 VCE = 3V BASE-TO-EMITTER VOLTAGE FOR DARLINGTON PAIR (V) 4 OFFSET VOLTAGE (mV) 3 2 0.75 0.50 0.25 0 -75 IE = 0.1mA IE = 1mA IE = 10mA 1.6 (Continued) 1.7 VCE = 3V TA = 25oC 1.5 1.4 1.3 1.2 -50 -25 0 25 50 75 100 125 0.1 AMBIENT TEMPERATURE (oC) 1 EMITTER CURRENT (mA) 10 FIGURE 7. TYPICAL OFFSET VOLTAGE CHARACTERISTIC vs TEMPERATURE FIGURE 8. TYPICAL STATIC INPUT VOLTAGE CHARACTERISTIC FOR DARLINGTON PAIR (Q3 AND Q4) vs EMITTER CURRENT 2 VCE = 3V BASE-TO-EMITTER VOLTAGE FOR DARLINGTON PAIR (V) 1.75 IE = 3mA IE = 1mA NOISE FIGURE (dB) 1.50 IE = 0.5mA 1.25 15 20 VCE = 3V RS = 500 TA = 25oC f = 0.1kHz f = 1kHz 10 f = 10kHz 1 5 0.75 -75 -50 -25 0 25 50 75 100 125 AMBIENT TEMPERATURE (oC) 0 0.01 0.1 COLLECTOR CURRENT (mA) 1 FIGURE 9. TYPICAL STATIC INPUT VOLTAGE CHARACTERISTIC FOR DARLINGTON PAIR (Q3 AND Q4) vs TEMPERATURE FIGURE 10. NOISE FIGURE vs COLLECTOR CURRENT 20 VCE = 3V RS = 1000 TA = 25oC NOISE FIGURE (dB) 30 25 20 15 10 5 VCE = 3V RS = 10000 TA = 25oC NOISE FIGURE (dB) 15 f = 0.1kHz f = 1kHz f = 0.1kHz f = 1kHz f = 10kHz 10 f = 10kHz 5 0 0.01 0.1 COLLECTOR CURRENT (mA) 1 0 0.01 0.1 COLLECTOR CURRENT (mA) 1 FIGURE 11. NOISE FIGURE vs COLLECTOR CURRENT FIGURE 12. NOISE FIGURE vs COLLECTOR CURRENT 5 CA3018, CA3018A Typical Performance Curves 100 NORMALIZED h PARAMETERS VCE = 3V f = 1kHz TA = 25oC hIE 10 hRE (Continued) FORWARD TRANSFER CONDUCTANCE (gFE) OR SUSCEPTANCE (bFE) (mS) hFE = 110 hIE = 3.5k hRE = 1.88 x 10-4 hOE = 15.6S hOE AT 1mA 40 30 20 10 0 -10 -20 COMMON EMITTER CIRCUIT, BASE INPUT TA = 25oC, VCE = 3V, IC = 1mA gFE 1.0 hFE hRE hIE 0.1 0.01 0.1 1.0 COLLECTOR CURRENT (mA) 10 bFE 0.1 1 10 FREQUENCY (MHz) 100 FIGURE 13. h PARAMETERS vs COLLECTOR CURRENT FIGURE 14. FORWARD TRANSFER ADMITTANCE (YFE) 6 5 4 3 bIE 2 1 0 0.1 1 10 FREQUENCY (MHz) 100 OUTPUT CONDUCTANCE (gOE) OR SUSCEPTANCE (bOE) (mS) COMMON EMITTER CIRCUIT, BASE INPUT TA = 25oC, VCE = 3V, IC = 1mA 6 5 4 3 2 1 COMMON EMITTER CIRCUIT, BASE INPUT TA = 25oC, VCE = 3V, IC = 1mA INPUT CONDUCTANCE (gIE) OR SUSCEPTANCE (bIE) (mS) bOE gIE gOE 0 0.1 1 10 FREQUENCY (MHz) 100 FIGURE 15. INPUT ADMITTANCE (YIE) FIGURE 16. OUTPUT ADMITTANCE (YOE) REVERSE TRANSFER CONDUCTANCE (gRE) OR SUSCEPTANCE (bRE) (mS) GAIN BANDWIDTH PRODUCT (MHz) COMMON EMITTER CIRCUIT, BASE INPUT TA = 25oC, VCE = 3V, IC = 1mA gRE IS SMALL AT FREQUENCIES LESS THAN 500MHz 0 bRE 1000 900 800 700 600 500 400 300 200 100 0 VCE = 3V TA = 25oC -0.5 -1.0 -1.5 -2.0 1 10 FREQUENCY (MHz) 100 1 2 3 4 56 7 8 9 10 11 COLLECTOR CURRENT (mA) 12 13 14 FIGURE 17. REVERSE TRANSFER ADMITTANCE (YRE) FIGURE 18. TYPICAL GAIN BANDWIDTH PRODUCT (fT) vs COLLECTOR CURRENT 6 |
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